@article{fdi:010066103, title = {{T}ranscriptome changes in {H}irschfeldia incana in response to lead exposure}, author = {{A}uguy, {F}lorence and {F}ahr, {M}. and {M}oulin {E}smard, {P}atricia and {E}l {M}zibri, {M}. and {S}mouni, {A}. and {F}ilali-{M}altouf, {A}. and {B}{\'e}na, {G}illes and {D}oumas, {P}.}, editor = {}, language = {{ENG}}, abstract = {{H}irschfeldia incana, a pseudometallophyte belonging to the {B}rassicaceae family and widespread in the {M}editerranean region, was selected for its ability to grow on soils contaminated by lead ({P}b). {T}he global comparison of gene expression using microarrays between a plant susceptible to {P}b ({A}rabidopsis thaliana) and a {P}b tolerant plant ({H}. incana) enabled the identification of a set of specific genes expressed in response to lead exposure. {T}hree groups of genes were particularly over-represented by the {P}b exposure in the biological processes categorized as photosynthesis, cell wall, and metal handling. {E}ach of these gene groups was shown to be directly involved in tolerance or in protection mechanisms to the phytotoxicity associated with {P}b. {A}mong these genes, we demonstrated that {MT}2b, a metallothionein gene, was involved in lead accumulation, confirming the important role of metallothioneins in the accumulation and the distribution of {P}b in leaves. {O}n the other hand, several genes involved in biosynthesis of {ABA} were shown to be up regulated in the roots and shoots of {H}. incana treated with {P}b, suggesting that {ABA}-mediated signaling is a possible mechanism in response to {P}b treatment in {H}. incana. {T}his latest finding is an important research direction for future studies.}, keywords = {{H}irschfeldia incana ; {A}rabidopsis thaliana ; {B}rassicaceae ; functional genomics ; lead tolerance ; transcriptome}, booktitle = {}, journal = {{F}rontiers in {P}lant {S}cience}, volume = {6}, numero = {}, pages = {art. 1231 [13 p.]}, ISSN = {1664-462{X}}, year = {2016}, DOI = {10.3389/fpls.2015.01231}, URL = {https://www.documentation.ird.fr/hor/fdi:010066103}, }